APT24F50B
MOSFET N-CH 500V 24A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT24F50B is an N-Channel POWER MOS 8™ MOSFET designed for high-efficiency power conversion. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 24A at 25°C (Tc), with a maximum power dissipation of 335W (Tc). The APT24F50B offers a low Rds On of 240mOhm at 11A and 10V, ensuring minimal conduction losses. Key parameters include a Gate Charge (Qg) of 90 nC at 10V and an Input Capacitance (Ciss) of 3630 pF at 25V. With a standard TO-247-3 package and through-hole mounting, this MOSFET is suitable for demanding applications in power supplies, motor control, and industrial automation. It operates over a temperature range of -55°C to 150°C (TJ) and supports a Gate-Source Voltage (Vgs) up to ±30V.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 335W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3630 pF @ 25 V |
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