APT23F60B
MOSFET N-CH 600V 24A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT23F60B is an N-Channel Power MOSFET from the POWER MOS 8™ series. This device features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 24A at 25°C (Tc). The APT23F60B offers a low on-resistance (Rds On) of 290mOhm maximum at 11A and 10V, coupled with a maximum power dissipation of 415W (Tc). Key parameters include a gate charge (Qg) of 110 nC maximum at 10V and input capacitance (Ciss) of 4415 pF maximum at 25V. The component is housed in a TO-247-3 package for through-hole mounting. This MOSFET is suitable for applications in power conversion and high-voltage switching, commonly found in industrial power supplies and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 415W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4415 pF @ 25 V |
Request a Quote
Clients Also Buy
APT53F80J
MOSFET N-CH 800V 57A ISOTOP
APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP
APT24F50B
MOSFET N-CH 500V 24A TO247
