APT22F80B
MOSFET N-CH 800V 23A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT22F80B is an N-Channel Power MOSFET designed for high voltage applications. This device offers a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 23A at 25°C. The APT22F80B features a low on-resistance of 500mOhm maximum at 12A, 10V, which contributes to efficient power handling with a maximum power dissipation of 625W (Tc). The MOSFET is packaged in a TO-247-3 through-hole configuration, suitable for demanding thermal management. Key parameters include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 4595 pF at 25V. This component finds application in power factor correction, switch mode power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4595 pF @ 25 V |
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