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APT22F120L

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APT22F120L

MOSFET N-CH 1200V 23A TO264

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT22F120L is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component offers a Drain-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 23A (Tc) at 25°C. With a maximum power dissipation of 1040W (Tc), it is suitable for high-power applications. The device features a low on-resistance of 700mOhm at 12A and 10V (Vgs). Key parameters include gate charge (Qg) of 260 nC @ 10 V and input capacitance (Ciss) of 8370 pF @ 25 V. The APT22F120L is packaged in a TO-264-3, TO-264AA through-hole configuration and operates across a temperature range of -55°C to 150°C (TJ). This device is commonly utilized in power factor correction, industrial power supplies, and electric vehicle applications.

Additional Information

Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageTO-264 [L]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8370 pF @ 25 V

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