APT22F120B2
MOSFET N-CH 1200V 23A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT22F120B2 is a high-performance N-Channel POWER MOS 8™ MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 23 A at 25°C, with a maximum power dissipation of 1040 W. The APT22F120B2 exhibits a low Rds On of 700 mOhm at 12 A and 10 V, and a gate charge (Qg) of 260 nC at 10 V. Its input capacitance (Ciss) is rated at 8370 pF at 25 V. Operating across a temperature range of -55°C to 150°C, this MOSFET utilizes advanced Metal Oxide technology and is housed in a T-MAX™ [B2] package. This component is suitable for use in power conversion systems, industrial motor control, and high-voltage power supplies.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8370 pF @ 25 V |
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