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APT20M22LVFRG

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APT20M22LVFRG

MOSFET N-CH 200V 100A TO264

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT20M22LVFRG is a POWER MOS V® N-Channel MOSFET designed for high-power applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current of 100A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). The device exhibits a low on-resistance (Rds On) of 22mOhm at 50A and 10V, and a gate charge (Qg) of 435 nC at 10V. Input capacitance (Ciss) is a maximum of 10200 pF at 25V. The APT20M22LVFRG is housed in a TO-264 package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) tolerance of ±30V. This MOSFET is utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.

Additional Information

Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)520W (Tc)
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageTO-264 [L]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10200 pF @ 25 V

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