APT20M20B2FLLG
MOSFET N-CH 200V 100A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT20M20B2FLLG is a high-performance N-Channel POWER MOS V® MOSFET designed for demanding applications. This component features a robust 200V drain-source voltage rating and a continuous drain current capability of 100A at 25°C (Tc). Engineered for efficient power switching, it exhibits a low on-resistance of 20mOhm at 50A and 10V. Key electrical characteristics include a gate charge of 110 nC at 10V and an input capacitance (Ciss) of 6850 pF at 25V. The device is housed in a TO-247-3 Variant package, identified by Microchip Technology as T-MAX™ [B2], suitable for through-hole mounting. This MOSFET technology is widely utilized in power conversion, motor control, and renewable energy systems where high current handling and voltage blocking are critical.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6850 pF @ 25 V |
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