APT20M18B2VFRG
MOSFET N-CH 200V 100A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology POWER MOS V® APT20M18B2VFRG is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 100A at 25°C. With a low on-resistance (Rds On) of 18mOhm at 50A and 10V, it ensures efficient power handling. The device offers a gate charge (Qg) of 330 nC at 10V and an input capacitance (Ciss) of 9880 pF at 25V. Packaged in a TO-247-3 variant with a T-MAX™ [B2] supplier device package, this through-hole mounted MOSFET is suitable for power supply, motor control, and industrial automation sectors.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 50A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9880 pF @ 25 V |
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