APT20M11JVFR
MOSFET N-CH 200V 175A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT20M11JVFR, a high-performance N-Channel POWER MOS V® MOSFET, offers a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 175A at 25°C (Tc). This component features a maximum power dissipation of 700W (Tc) and a low on-resistance (Rds On) of 11mOhm at 500mA and 10V gate-source voltage. Designed for robust operation with a gate-source voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 4V at 5mA, it is presented in a SOT-227-4, miniBLOC (ISOTOP®) package, facilitating chassis mounting. Key electrical characteristics include input capacitance (Ciss) of 21600pF at 25V and gate charge (Qg) of 180nC at 10V. The APT20M11JVFR is suitable for demanding applications in power supply, motor control, and industrial power conversion sectors. It operates across an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 175A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21600 pF @ 25 V |
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