APT19F100J
MOSFET N-CH 1000V 20A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT19F100J is an N-Channel POWER MOS 8™ series MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 460W (Tc). The device offers a low Rds On of 440mOhm at 16A and 10V. Key parameters include a gate charge (Qg) of 260 nC maximum at 10V and an input capacitance (Ciss) of 8500 pF maximum at 25V. The APT19F100J utilizes ISOTOP® packaging for efficient thermal management via chassis mounting. This MOSFET is suitable for use in power factor correction, industrial power supplies, and high-voltage DC-DC converters. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
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