APT18F60B
MOSFET N-CH 600V 19A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT18F60B is a 600 V N-Channel Power MOSFET designed for demanding applications. This through-hole component, housed in a TO-247-3 package, offers a continuous drain current of 19A at 25°C and a maximum power dissipation of 335W (Tc). Key electrical characteristics include a Vgs(th) of 5V at 1mA, a low Rds On of 390mOhm at 9A and 10V, and a gate charge of 90 nC at 10V. The device features an input capacitance (Ciss) of 3550 pF at 25V. Its robust construction and 150°C operating temperature rating make it suitable for use in power supply units, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 335W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 25 V |
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