APT17F80S
MOSFET N-CH 800V 18A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT17F80S is an N-Channel POWER MOS 8™ series MOSFET designed for high-voltage applications. This surface mount component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 18 A at 25°C. With a maximum power dissipation of 500W (Tc) and a low on-resistance (Rds On) of 580mOhm at 9A, 10V, it is suitable for demanding power conversion and switching tasks. The device has a gate charge (Qg) of 122 nC at 10 V and an input capacitance (Ciss) of 3757 pF at 25 V. Packaged in a D3PAK (TO-268-3, D3PAK) for efficient thermal management, the APT17F80S operates across a temperature range of -55°C to 150°C. This component finds application in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3757 pF @ 25 V |
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