APT17F80B
MOSFET N-CH 800V 18A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT17F80B is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 18A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 580mOhm at 9A and 10V, with a gate charge (Qg) of 122 nC at 10V. Input capacitance (Ciss) is rated at 3757 pF at 25V. With a power dissipation capability of 500W (Tc), this through-hole TO-247-3 packaged MOSFET operates across a temperature range of -55°C to 150°C (TJ). It is suitable for high-voltage power conversion applications in industries such as industrial power supplies, renewable energy systems, and motor control.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3757 pF @ 25 V |