APT17F120J
MOSFET N-CH 1200V 18A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT17F120J is an N-Channel POWER MOS 8™ series MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 18A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 580mOhm at 14A and 10V, with a maximum power dissipation of 545W (Tc). The APT17F120J utilizes ISOTOP® packaging for efficient thermal management, suitable for chassis mounting. Key electrical characteristics include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 9670 pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in industries such as industrial power supplies and electric vehicle charging.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 545W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9670 pF @ 25 V |
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