APT17F100S
MOSFET N-CH 1000V 17A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT17F100S is an N-Channel Power MOSFET from the POWER MOS 8™ series. This device offers a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 17 A at 25°C, with a maximum power dissipation of 625 W (Tc). Key parameters include a maximum on-resistance (Rds On) of 780 mOhm at 9 A and 10 V, and a gate charge (Qg) of 150 nC at 10 V. It features a surface mount D3PAK package (TO-268-3, D3PAK) and operates within a temperature range of -55°C to 150°C. This component is suitable for high-voltage applications across industries such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 780mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4845 pF @ 25 V |
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