APT17F100B
MOSFET N-CH 1000V 17A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT17F100B is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) rating of 17A at 25°C (Tc). With a maximum power dissipation of 625W (Tc), it is suitable for demanding power conversion and switching applications. The MOSFET exhibits a low on-resistance (Rds On) of 800mOhm at 9A and 10V gate drive, contributing to efficient operation. Key parameters include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 4845 pF at 25V. The device is housed in a standard TO-247-3 package with a through-hole mounting type. This component is commonly utilized in industrial power supplies, electric vehicle charging, and renewable energy systems. Operating temperature range is specified from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4845 pF @ 25 V |
Request a Quote
Clients Also Buy
APT30M40JVFR
MOSFET N-CH 300V 70A ISOTOP
APT20M120JCU2
MOSFET N-CH 1200V 20A SOT227
APTM50DAM19G
MOSFET N-CH 500V 163A SP6
