APT14F100S
MOSFET N-CH 1000V 14A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT14F100S is an N-Channel POWER MOS 8™ series MOSFET. This surface mount component features a drain-to-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 14 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 980 mOhm at 7 A and 10 V gate drive. Key characteristics include a gate charge (Qg) of 120 nC at 10 V and input capacitance (Ciss) of 3965 pF at 25 V. With a maximum power dissipation of 500 W (Tc), it is housed in a D3PAK package (TO-268-3, TO-268AA). Operating temperature ranges from -55°C to 150°C (TJ). This device finds application in power supply and power factor correction circuits.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3965 pF @ 25 V |
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