APT14F100B
MOSFET N-CH 1000V 14A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT14F100B is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component features a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 14 A at 25°C, with a maximum power dissipation of 500 W (Tc). The Rds On is specified at 980 mOhm maximum at 7 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 120 nC at 10 V and input capacitance (Ciss) of 3965 pF at 25 V. The device is housed in a TO-247-3 package with through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for applications in power supply, industrial motor control, and high-voltage switching.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3965 pF @ 25 V |
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