APT13F120S
MOSFET N-CH 1200V 14A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS 8™ APT13F120S is a high-voltage N-Channel MOSFET designed for demanding applications. This component offers a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 14A at 25°C. Featuring a low on-resistance of 1.2 Ohms maximum at 7A and 10V gate drive, it delivers efficient power handling with a maximum power dissipation of 625W (Tc). Key parameters include a gate charge of 145 nC at 10V and input capacitance (Ciss) of 4765 pF at 25V. The APT13F120S is housed in a TO-268-3, D3PAK surface mount package, suitable for high-power switching in industrial, automotive, and power supply sectors. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4765 pF @ 25 V |
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