APT12060LVFRG
MOSFET N-CH 1200V 20A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS V® APT12060LVFRG is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 20 A at 25°C. The ON-resistance (Rds On) is a maximum of 600 mOhms at 10 A and 10 V. Key parameters include a Gate Charge (Qg) of 650 nC at 10 V and Input Capacitance (Ciss) of 9500 pF at 25 V. The device is packaged in a TO-264-3, TO-264AA package, suitable for through-hole mounting. This MOSFET technology is utilized in power factor correction, industrial power supplies, and alternative energy systems.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 10A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-264 [L] |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 650 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 25 V |
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