APT12057B2FLLG
MOSFET N-CH 1200V 22A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT12057B2FLLG is a N-Channel POWER MOS 7® series MOSFET designed for high-voltage applications. This component offers a 1200V drain-source voltage rating and a continuous drain current capability of 22A at 25°C. With a maximum power dissipation of 690W (Tc), it is suitable for demanding power conversion tasks. The Rds On (Max) is specified at 570mOhm at 11A and 10V gate drive. Key parameters include a 185 nC gate charge and 5155 pF input capacitance. This through-hole device, housed in a TO-247-3 Variant (T-MAX™ [B2]) package, operates across a temperature range of -55°C to 150°C. It finds application in industries such as industrial power supplies and electric vehicle charging.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 570mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5155 pF @ 25 V |
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