APT1204R7SFLLG
MOSFET N-CH 1200V 3.5A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Microchip Technology POWER MOS 7® APT1204R7SFLLG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 3.5A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 4.7 Ohms when driven with 10V Vgs at 1.75A. Key electrical parameters include a gate charge (Qg) of 31 nC (max) at 10V and an input capacitance (Ciss) of 715 pF (max) at 25V. The APT1204R7SFLLG is presented in a TO-268-3, D3PAK surface-mount package, facilitating integration into compact designs. This device finds application in industries requiring robust power switching capabilities, such as industrial power supplies and high-voltage converters.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1.75A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 715 pF @ 25 V |
Request a Quote
Clients Also Buy
APT1201R2BFLLG
MOSFET N-CH 1200V 12A TO247
APT15GP60BDQ1G
IGBT PT 600V 56A TO247
APT10090BLLG
MOSFET N-CH 1000V 12A TO247
