APT1201R6SVFRG
MOSFET N-CH 1200V 8A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT1201R6SVFRG is a N-channel POWER MOS V® series MOSFET with a Drain-Source Voltage (Vdss) of 1200 V. This surface mount component, packaged in a TO-268-3, D3PAK, offers a continuous drain current (Id) of 8A at 25°C. Key electrical parameters include a maximum Rds On of 1.6 Ohms at 4A and 10V, and a gate charge (Qg) of 230 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 3660 pF at 25 V, with a gate threshold voltage (Vgs(th)) of 4V at 1mA. This device is suitable for high-voltage applications in power factor correction, uninterruptible power supplies (UPS), and industrial motor control.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D3PAK |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 25 V |
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