APT1201R6BVFRG
MOSFET N-CH 1200V 8A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT1201R6BVFRG is an N-Channel POWER MOS V® MOSFET. This through-hole component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 8A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 1.6 Ohms at 4A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 230 nC (max) at 10V Vgs and an input capacitance (Ciss) of 3660 pF (max) at 25V Vds. The threshold voltage (Vgs(th)) is 4V (max) at 1mA. Packaged in a TO-247-3, this MOSFET is suitable for applications in power supply units, motor control, and industrial power conversion.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 25 V |
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