APT1201R5BVFRG
MOSFET N-CH 1200V 10A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT1201R5BVFRG is an N-Channel POWER MOS V® series MOSFET. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 10 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 1.5 Ohm at 5 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 285 nC at 10 V and input capacitance (Ciss) of 4440 pF at 25 V. This through-hole device is packaged in a TO-247-3 configuration. The APT1201R5BVFRG is utilized in applications requiring high voltage switching, such as power supplies and industrial motor control.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4440 pF @ 25 V |
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