APT1201R4SFLLG
MOSFET N-CH 1200V 9A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT1201R4SFLLG is an N-Channel POWER MOS 7® MOSFET. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 9A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 1.4 Ohms at 4.5A and 10V. Key characteristics include a gate charge (Qg) of 120 nC at 10V and an input capacitance (Ciss) of 2500 pF at 25V. The APT1201R4SFLLG is supplied in a TO-268-3, D3PAK surface mount package, facilitating integration into power conversion and control applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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