APT1201R4BFLLG
MOSFET N-CH 1200V 9A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology POWER MOS 7® APT1201R4BFLLG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 9A at 25°C, with a maximum power dissipation of 300W. The APT1201R4BFLLG exhibits a typical Rds On of 1.5 Ohm at 4.5A and 10V gate drive. Key electrical characteristics include an input capacitance (Ciss) of 2030 pF and a gate charge (Qg) of 75 nC. It is housed in a TO-247-3 package with through-hole mounting. This MOSFET is suitable for use in demanding applications across industrial and power conversion sectors.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF @ 25 V |
Request a Quote
Clients Also Buy
APT1201R2BFLLG
MOSFET N-CH 1200V 12A TO247
APT15GP60BDQ1G
IGBT PT 600V 56A TO247
APT10090BLLG
MOSFET N-CH 1000V 12A TO247
