APT1201R2BFLLG
MOSFET N-CH 1200V 12A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT1201R2BFLLG is an N-Channel POWER MOS 7® series MOSFET. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 12 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 1.25 Ohms at 6 A and 10 V. Key parameters include a gate charge (Qg) of 100 nC at 10 V and an input capacitance (Ciss) of 2540 pF at 25 V. The APT1201R2BFLLG is housed in a TO-247-3 through-hole package. This component is suitable for high-voltage power applications, including industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 6A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 25 V |
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