APT11N80BC3G
MOSFET N-CH 800V 11A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT11N80BC3G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 11A at 25°C. The device offers a maximum on-resistance (Rds On) of 450mOhm at 7.1A and 10V gate-source voltage, with a power dissipation rating of 156W at the case temperature. Key parameters include input capacitance (Ciss) of 1585pF at 25V and a gate charge (Qg) of 60nC at 10V. The APT11N80BC3G utilizes a Metal Oxide technology and is housed in a TO-247-3 through-hole package. This component is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 7.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 680µA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585 pF @ 25 V |
Request a Quote
Clients Also Buy
APTM120U10SAG
MOSFET N-CH 1200V 116A SP6
VN0109N3-G
MOSFET N-CH 90V 350MA TO92-3
APT30M40JVFR
MOSFET N-CH 300V 70A ISOTOP
