APT11F80B
MOSFET N-CH 800V 12A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT11F80B is an N-Channel POWER MOS 8™ series MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 800 V and a continuous drain current (Id) capability of 12A at 25°C (Tc). The device exhibits a maximum Rds On of 900mOhm at 6A and 10V, with a Gate Charge (Qg) of 80 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 2471 pF at 25V. The APT11F80B supports a maximum power dissipation of 337W (Tc) and operates across an industrial temperature range of -55°C to 150°C (TJ). Packaged in a TO-247-3 through-hole configuration, this MOSFET is suitable for use in power supply, industrial motor control, and lighting applications. The maximum gate-source voltage (Vgs) is ±30V.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 337W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2471 pF @ 25 V |
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