APT10M11JVFR
MOSFET N-CH 100V 144A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT10M11JVFR is an N-Channel POWER MOS V® MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 144 A at 25°C (Tc). Its low on-resistance of 11 mOhm at 500 mA and 10 V (Rds On) makes it suitable for efficient power switching. The APT10M11JVFR includes a gate charge of 450 nC at 10 V and an input capacitance (Ciss) of 10380 pF at 25 V. Presented in a SOT-227-4, miniBLOC package, it utilizes the ISOTOP® technology for robust thermal management and is chassis mountable. This MOSFET is commonly implemented in power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 144A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 500mA, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10380 pF @ 25 V |
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