APT106N60LC6
MOSFET N-CH 600V 106A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT106N60LC6 is an N-Channel CoolMOS™ Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 106A at 25°C (Tc), with a maximum power dissipation of 833W (Tc). The APT106N60LC6 offers a low on-resistance (Rds On) of 35mOhm at 53A and 10V, and a gate charge (Qg) of 308 nC at 10V. It utilizes Metal Oxide MOSFET technology and is packaged in a TO-264 (L) through-hole mount. Key parameters include a gate-source voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 3.5V at 3.4mA. This device is suitable for use in industrial power supplies, motor control, and electric vehicle charging systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3.4mA |
| Supplier Device Package | TO-264 (L) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 308 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8390 pF @ 25 V |