APT106N60B2C6
MOSFET N-CH 600V 106A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT106N60B2C6, an N-Channel MOSFET from the CoolMOS™ series, offers a robust solution for high-power applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current of 106A at 25°C, with a maximum power dissipation of 833W. The device boasts a low on-resistance of 35mOhm at 53A and 10V (Vgs), facilitated by a gate charge of 308 nC at 10V. With an input capacitance (Ciss) of 8390 pF at 25V, it is designed for through-hole mounting in a TO-247-3 Variant package. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for demanding industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3.4mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 308 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8390 pF @ 25 V |