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APT100MC120JCU2

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APT100MC120JCU2

SICFET N-CH 1200V 143A SOT227

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microchip Technology APT100MC120JCU2 is an N-Channel SiCFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 143 A at 25°C (Tc). With a maximum power dissipation of 600 W (Tc), it is suitable for demanding power conversion and control systems. The SiCFET technology offers low on-resistance, specified at 17 mOhm maximum at 100 A and 20 V gate-source voltage. Key parameters include a gate charge of 360 nC at 20 V and input capacitance (Ciss) of 5960 pF at 1000 V. The APT100MC120JCU2 is housed in a SOT-227 package for chassis mounting, facilitating efficient thermal management. Operating temperature ranges from -40°C to 150°C (TJ). This device finds application in industries such as industrial power supplies, electric vehicle powertrains, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C143A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 100A, 20V
FET Feature-
Power Dissipation (Max)600W (Tc)
Vgs(th) (Max) @ Id2.3V @ 2mA
Supplier Device PackageSOT-227
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs360 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds5960 pF @ 1000 V

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