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APT100F50J

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APT100F50J

MOSFET N-CH 500V 103A ISOTOP

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT100F50J is an N-Channel POWER MOS 8™ series MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 103A at 25°C (Tc), with a maximum power dissipation of 960W (Tc). The Rds On is specified at a maximum of 36mOhm at 75A and 10V gate drive. Key characteristics include a gate charge (Qg) of 620 nC at 10 V and input capacitance (Ciss) of 24600 pF at 25 V. The device is housed in a SOT-227-4, miniBLOC package with ISOTOP® technology, facilitating chassis mounting. Operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is suitable for demanding power conversion and control systems across various industrial sectors.

Additional Information

Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C103A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)960W (Tc)
Vgs(th) (Max) @ Id5V @ 5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds24600 pF @ 25 V

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