APT100F50J
MOSFET N-CH 500V 103A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT100F50J is an N-Channel POWER MOS 8™ series MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 103A at 25°C (Tc), with a maximum power dissipation of 960W (Tc). The Rds On is specified at a maximum of 36mOhm at 75A and 10V gate drive. Key characteristics include a gate charge (Qg) of 620 nC at 10 V and input capacitance (Ciss) of 24600 pF at 25 V. The device is housed in a SOT-227-4, miniBLOC package with ISOTOP® technology, facilitating chassis mounting. Operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is suitable for demanding power conversion and control systems across various industrial sectors.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 620 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24600 pF @ 25 V |