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APT10050LVFRG

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APT10050LVFRG

MOSFET N-CH 1000V 21A TO264

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology POWER MOS V® APT10050LVFRG is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 1000V. It offers a continuous drain current (Id) of 21A at 25°C (Tc) and a maximum on-resistance (Rds On) of 500mOhm at 500mA, 10V. The device features a gate charge (Qg) of 500 nC at 10V and an input capacitance (Ciss) of 7900 pF at 25V. This through-hole component is housed in a TO-264-3, TO-264AA package. Applications for this MOSFET include high-voltage power conversion systems in industrial and consumer electronics. The APT10050LVFRG utilizes Metal Oxide technology for its operation. The threshold voltage (Vgs(th)) is a maximum of 4V at 2.5mA. It is supplied in tube packaging.

Additional Information

Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 500mA, 10V
FET Feature-
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageTO-264 [L]
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7900 pF @ 25 V

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