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APT10050B2VFRG

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APT10050B2VFRG

MOSFET N-CH 1000V 21A T-MAX

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology's APT10050B2VFRG is an N-Channel POWER MOS V® series MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 21A at 25°C (Tc). The TO-247-3 Variant package, utilizing the T-MAX™ [B2] supplier device package, ensures robust thermal performance. Key electrical characteristics include a maximum Rds On of 500mOhm at 500mA and 10V, an input capacitance (Ciss) of 7900 pF at 25V, and a gate charge (Qg) of 500 nC at 10V. The threshold voltage (Vgs(th)) is a maximum of 4V at 2.5mA. This MOSFET is suitable for power conversion and control systems across various industries, including industrial automation and renewable energy.

Additional Information

Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 500mA, 10V
FET Feature-
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageT-MAX™ [B2]
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7900 pF @ 25 V

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