APT10050B2VFRG
MOSFET N-CH 1000V 21A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT10050B2VFRG is an N-Channel POWER MOS V® series MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 21A at 25°C (Tc). The TO-247-3 Variant package, utilizing the T-MAX™ [B2] supplier device package, ensures robust thermal performance. Key electrical characteristics include a maximum Rds On of 500mOhm at 500mA and 10V, an input capacitance (Ciss) of 7900 pF at 25V, and a gate charge (Qg) of 500 nC at 10V. The threshold voltage (Vgs(th)) is a maximum of 4V at 2.5mA. This MOSFET is suitable for power conversion and control systems across various industries, including industrial automation and renewable energy.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 500 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V |
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