APT10045B2FLLG
MOSFET N-CH 1000V 23A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APT10045B2FLLG is an N-Channel POWER MOS 7® series MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) rating of 23A at 25°C (Tc). With a typical Rds(on) of 460mOhm at 11.5A and 10V, it offers efficient power handling. The device has a gate charge (Qg) of 154 nC at 10V and an input capacitance (Ciss) of 4350 pF at 25V. The APT10045B2FLLG is housed in a through-hole TO-247-3 Variant package, specifically the T-MAX™ [B2] supplier device package. Its technology is based on Metal Oxide MOSFET. This component is utilized in power supply and power conversion systems across various industries.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 11.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 25 V |
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