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APT10045B2FLLG

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APT10045B2FLLG

MOSFET N-CH 1000V 23A T-MAX

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microchip Technology APT10045B2FLLG is an N-Channel POWER MOS 7® series MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) rating of 23A at 25°C (Tc). With a typical Rds(on) of 460mOhm at 11.5A and 10V, it offers efficient power handling. The device has a gate charge (Qg) of 154 nC at 10V and an input capacitance (Ciss) of 4350 pF at 25V. The APT10045B2FLLG is housed in a through-hole TO-247-3 Variant package, specifically the T-MAX™ [B2] supplier device package. Its technology is based on Metal Oxide MOSFET. This component is utilized in power supply and power conversion systems across various industries.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Rds On (Max) @ Id, Vgs460mOhm @ 11.5A, 10V
FET Feature-
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageT-MAX™ [B2]
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 25 V

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