APT1003RSFLLG
MOSFET N-CH 1000V 4A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology POWER MOS 7® APT1003RSFLLG is an N-Channel Power MOSFET engineered for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 1000 V and supports a continuous Drain Current (Id) of 4A at 25°C (Tc). With a low Rds On of 3 Ohms maximum at 2A and 10V, it minimizes conduction losses. The APT1003RSFLLG is housed in a TO-268-3, D3PAK surface mount package, facilitating efficient thermal management. Key electrical parameters include a Gate Charge (Qg) of 34 nC maximum at 10 V and an Input Capacitance (Ciss) of 694 pF maximum at 25 V. This component is suitable for power conversion and switching applications across various industries, including industrial automation and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 694 pF @ 25 V |
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