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APT1003RKLLG

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APT1003RKLLG

MOSFET N-CH 1000V 4A TO220

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology POWER MOS 7® APT1003RKLLG is an N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 4A at 25°C case temperature. The APT1003RKLLG offers a maximum on-resistance (Rds On) of 3 Ohm at 2A and 10V Vgs, with a power dissipation of 139W (Tc). Key parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 694 pF at 25V. The component is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). Typical applications include power supply units and high-voltage switching circuits.

Additional Information

Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)139W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-220 [K]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds694 pF @ 25 V

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