APT1003RKLLG
MOSFET N-CH 1000V 4A TO220Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS 7® APT1003RKLLG is an N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 4A at 25°C case temperature. The APT1003RKLLG offers a maximum on-resistance (Rds On) of 3 Ohm at 2A and 10V Vgs, with a power dissipation of 139W (Tc). Key parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 694 pF at 25V. The component is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). Typical applications include power supply units and high-voltage switching circuits.
Additional Information
Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220 [K] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 694 pF @ 25 V |
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