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APT10035JFLL

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APT10035JFLL

MOSFET N-CH 1000V 25A ISOTOP

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT10035JFLL, an N-Channel POWER MOS 7® MOSFET, offers a robust solution for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) capability of 25A at 25°C (Tc). The low on-resistance of 370mOhm at 14A (Id) and 10V (Vgs) minimizes conduction losses, while the substantial continuous drain current rating of 25A (Tc) ensures reliable operation under demanding conditions. With a maximum power dissipation of 520W (Tc), this device is well-suited for power conversion and control circuits in industries such as industrial automation, renewable energy, and electric vehicle power systems. The ISOTOP® package, specifically SOT-227-4 miniBLOC, facilitates efficient thermal management through chassis mounting. Key electrical characteristics include a gate charge (Qg) of 186 nC at 10 V and an input capacitance (Ciss) of 5185 pF at 25 V. Operating across a temperature range of -55°C to 150°C (TJ), the APT10035JFLL provides dependable performance in harsh environments.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs370mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)520W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageISOTOP®
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5185 pF @ 25 V

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