APT10035B2FLLG
MOSFET N-CH 1000V 28A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT10035B2FLLG is an N-Channel POWER MOS 7® series MOSFET. This through-hole component offers a Drain-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 28A at 25°C with a maximum power dissipation of 690W. The Rds On is specified at 370mOhm maximum at 14A and 10V. Features include a gate charge of 186 nC at 10V and input capacitance of 5185 pF at 25V. The device operates across a temperature range of -55°C to 150°C. The TO-247-3 Variant package is utilized, with the supplier device package designated as T-MAX™ [B2]. This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5185 pF @ 25 V |
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