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APT10026L2FLLG

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APT10026L2FLLG

MOSFET N-CH 1000V 38A 264 MAX

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology's APT10026L2FLLG is an N-Channel POWER MOS 7® MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 38A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 260mOhm at 19A and 10V, with a specified gate charge (Qg) of 267 nC and input capacitance (Ciss) of 7114 pF. The device is housed in a TO-264-3, TO-264AA package, identified by the 264 MAX™ [L2] supplier device package. This MOSFET is suitable for power conversion and control systems in industrial and renewable energy sectors.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs260mOhm @ 19A, 10V
FET Feature-
Vgs(th) (Max) @ Id5V @ 5mA
Supplier Device Package264 MAX™ [L2]
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7114 pF @ 25 V

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