APT10026L2FLLG
MOSFET N-CH 1000V 38A 264 MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology's APT10026L2FLLG is an N-Channel POWER MOS 7® MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 38A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 260mOhm at 19A and 10V, with a specified gate charge (Qg) of 267 nC and input capacitance (Ciss) of 7114 pF. The device is housed in a TO-264-3, TO-264AA package, identified by the 264 MAX™ [L2] supplier device package. This MOSFET is suitable for power conversion and control systems in industrial and renewable energy sectors.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 19A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | 264 MAX™ [L2] |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7114 pF @ 25 V |
Request a Quote
Clients Also Buy
APT1201R2BFLLG
MOSFET N-CH 1200V 12A TO247
APT15GP60BDQ1G
IGBT PT 600V 56A TO247
APT10090BLLG
MOSFET N-CH 1000V 12A TO247
