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APT1001RBVFRG

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APT1001RBVFRG

MOSFET N-CH 1000V 11A TO247

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT1001RBVFRG is an N-Channel POWER MOS V® series power MOSFET. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) rating of 11 A at 25°C (Tc). The APT1001RBVFRG offers a maximum on-resistance (Rds On) of 1 Ohm at 5.5 A and 10 V. Key parameters include a gate charge (Qg) of 150 nC at 10 V and an input capacitance (Ciss) of 3050 pF at 25 V. The device utilizes through-hole mounting in a TO-247-3 package. Its high voltage and current capabilities make it suitable for applications in power supply design, industrial motor control, and high-voltage switching applications.

Additional Information

Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs1Ohm @ 5.5A, 10V
FET Feature-
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-247 [B]
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3050 pF @ 25 V

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