APT1001RBN
MOSFET N-CH 1000V 11A TO247ADManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS IV® APT1001RBN is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 11A at 25°C. The device offers a maximum On-Resistance (Rds On) of 1 Ohm at 5.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 2950 pF at 25V. The APT1001RBN is housed in a TO-247AD package with through-hole mounting, providing a maximum power dissipation of 310W. This device is suitable for power supply, motor control, and lighting applications. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
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