APT1001R1BN
MOSFET N-CH 1000V 10.5A TO247ADManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT1001R1BN, a POWER MOS IV® series N-Channel MOSFET, offers a drain-source voltage of 1000 V and a continuous drain current of 10.5 A at 25°C (Tc). This through-hole component, housed in a TO-247AD package, features a maximum power dissipation of 310 W (Tc) and a low on-resistance of 1.1 Ohm at 5.25 A and 10 V gate drive. Key parameters include a gate charge of 130 nC at 10 V and input capacitance of 2950 pF at 25 V. The APT1001R1BN is suitable for high-voltage applications across industrial power supplies, motor control, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±30 V.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
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