APL602L-1
MOSFET LINEAR 600 V 49 A TO-264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APL602L-1 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 49 A at 25°C (Tc). The device offers a low On-Resistance (Rds On) of 125 mOhm maximum at 24.5 A and 12 V gate drive. With a maximum power dissipation of 730 W (Tc), it is suitable for demanding power conversion tasks. The APL602L-1 utilizes Metal Oxide technology and is packaged in a TO-264-3, TO-264AA (TO-264 [L]) through-hole package, facilitating robust thermal management. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 24.5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 730W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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