APL1001J
MOSFET N-CH 1000V 18A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APL1001J is an N-Channel MOSFET designed for high-voltage applications, featuring a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 18A at 25°C. This component offers a maximum power dissipation of 520W (Tc) and a low on-resistance (Rds On) of 600mOhm at 500mA and 10V. The APL1001J utilizes ISOTOP® technology, packaged in a SOT-227-4, miniBLOC for efficient chassis mounting. Key parameters include an input capacitance (Ciss) of 7200 pF @ 25 V, a gate-source threshold voltage (Vgs(th)) of 4V @ 2.5mA, and a maximum gate-source voltage (Vgs) of ±30V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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