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UES1102SM/TR

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UES1102SM/TR

DIODE GEN PURP 100V 2.5A A-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

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Microchip Technology UES1102SM-TR is a general-purpose, fast-recovery diode designed for high-volume industrial and automotive applications. This surface-mount component, housed in an A-MELF (SQ-MELF, A) package, offers a maximum reverse voltage of 100 V and an average rectified current handling capability of 2.5 A. Key electrical characteristics include a low reverse leakage of 2 µA at 100 V and a typical capacitance of 3.5 pF at 6 V and 1 MHz. The diode exhibits a fast recovery time (trr) of 25 ns, classifying it within the speed category of <= 500 ns, > 200 mA (Io). With a maximum operating junction temperature of 150°C and supplied in Tape & Reel (TR) packaging, the UES1102SM-TR is engineered for efficient assembly and reliable performance in demanding electronic subsystems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25 ns
TechnologyStandard
Capacitance @ Vr, F3.5pF @ 6V, 1MHz
Current - Average Rectified (Io)2.5A
Supplier Device PackageA-MELF
Operating Temperature - Junction150°C (Max)
Voltage - DC Reverse (Vr) (Max)100 V
Current - Reverse Leakage @ Vr2 µA @ 100 V

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