UES1002/TR
DIODE GEN PURP 100V 1AManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology UES1002-TR is a General Purpose Diode designed for high-reliability applications. This component features a maximum DC reverse voltage of 100 V and an average rectified forward current handling capability of 1 A. Its forward voltage drop is specified at a maximum of 975 mV at 1 A. The diode exhibits a low reverse leakage current of 2 µA at its maximum reverse voltage. With a fast recovery time of 25 ns, it is suitable for applications requiring efficient switching. The UES1002-TR is packaged in an A, Axial through-hole configuration and supplied on tape and reel (TR) for automated assembly. This component is commonly utilized in power supply circuits, voltage clamping, and general rectification functions across various industrial and automotive sectors. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
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